? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 200 v v dgr t j = 25 c to 150 c, r gs = 1m - 200 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c -106 a i dm t c = 25 c, pulse width limited by t jm - 400 a i a t c = 25 c -100 a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 830 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1minute 2500 v~ i isol 1ma, t = 1s 3000 v~ m d mounting torque for base plate 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 200 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 15v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v - 25 a t j = 125 c - 300 a r ds(on) v gs = -10v, i d = 60a, note 1 30 m IXTN120P20T v dss = - 200v i d25 = - 106a r ds(on) 30m t rr 300ns ds100402a(01/13) p-channel enhancement mode avalanche rated fast intrinsic rectifier trenchp tm power mosfet features z international standard package z low intrinsic gate resistance z minibloc with aluminum nitride isolation z avalanche rated z extended fbsoa z fast intrinsic recitifier z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications minibloc e153432 g d s s g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. preliminary technical information s s d g
IXTN120P20T ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 60a, note 1 85 145 s c iss 73 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 2550 pf c rss 480 pf t d(on) 90 ns t r 85 ns t d(off) 200 ns t f 50 ns q g(on) 740 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = - 60a 220 nc q gd 120 nc r thjc 0.15 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v -120 a i sm repetitive, pulse width limited by t jm - 480 a v sd i f = -100a, v gs = 0v, note 1 -1.4 v t rr 300 ns q rm 3.3 c i rm 25.6 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = - 60a r g = 1 (external) i f = - 60a, -di/dt = -100a/ s v r = -100v, v gs = 0v (m4 screws (4x) supplied) sot-227b (ixtn) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXTN120P20T fig. 6. maximum drain current vs. case temperature -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc -120 -100 -80 -60 -40 -20 0 -3 -2.5 -2 -1.5 -1 -0.5 0 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 4 v - 5 v fig. 2. extended output characteristics @ t j = 25oc -300 -250 -200 -150 -100 -50 0 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 7v - 5 v - 6 v fig. 3. output characteristics @ t j = 125oc -120 -100 -80 -60 -40 -20 0 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 4v - 5v fig. 4. r ds(on) normalized to i d = - 60a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -120a i d = - 60a fig. 5. r ds(on) normalized to i d = - 60a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -280 -240 -200 -160 -120 -80 -40 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc
IXTN120P20T ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -5.8 -5.4 -5 -4.6 -4.2 -3.8 -3.4 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -300 -250 -200 -150 -100 -50 0 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 100 200 300 400 500 600 700 q g - nanocoulombs v gs - volts v ds = -100v i d = - 60a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc - - -- - - - - 100ms -
? 2013 ixys corporation, all rights reserved IXTN120P20T fig. 14. resistive turn-on rise time vs. drain current 60 80 100 120 140 160 180 -120 -110 -100 -90 -80 -70 -60 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = -100v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 12345678910 r g - ohms t r - nanoseconds 0 50 100 150 200 250 300 350 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = -100v i d = -120a i d = - 60a fig. 16. resistive turn-off switching times vs. junction temperature 40 45 50 55 60 65 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 140 160 180 200 220 240 260 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = -100v i d = - 120a i d = - 60a fig. 17. resistive turn-off switching times vs. drain current 170 180 190 200 210 220 230 240 250 -120 -110 -100 -90 -80 -70 -60 i d - amperes t f - nanoseconds 40 45 50 55 60 65 70 75 80 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = -100v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 60 80 100 120 140 160 180 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = -100v i d = - 60a i d = -120a fig. 18. resistive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 900 1000 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = -100v i d = - 120a, - 60a
IXTN120P20T ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: t_120p20t(a9) 10-25-11 fig. 19. maximum transient thermal impedance 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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